Air-Stable Solution-Processed Hybrid Transistors with Hole and Electron Mobilities Exceeding 2 cm<SUP>2</SUP> V<SUP>-1</SUP> s<SUP>-1</SUP>

Smith, Jeremy; Bashir, Aneeqa; Adamopoulos, George; Anthony, John E.; Bradley, Donal D. C.; Hamilton, R.; Heeney, Martin; McCulloch, Iain; Anthopoulos, Thomas D.

ADVANCED MATERIALS

2010

An alternative approach for the development of high-performance unipolar and ambipolar thin-film transistors and integrated circuits based on hybrid heterostructures comprising a phase-separated solution processed p-type organic small-molecule:polymer semicondcutor blend and a spray-coated n-type ZnO semiconductor layer is demonstrated.